Analysis of Mathematical Models of Semiconductor Devices

accuracy additional analysis appearing applied approximation argument assume assumption averages base bias voltages boundary conditions bounded carrier densities Chapter circuit computed consider constant continuity equations convergence corresponding current densities denote depending derivatives described determined device difference dimension discrete discussed distributions electron electrostatic potential elements equal equilibrium equivalent error essentially estimate example exists expect expression Figure Finally fixed flow follows given holds hole important independent integral iteration linear mapping mesh points method mobilities models numerical obtain particular physical Poisson equation positive possible present problem procedure proof readily reasonable recombination regions relations relatively replaced respectively satisfy scheme shown in Figure side similar simply smooth solution solving space specified stationary step stream functions sufficiently Suppose term Theorem uniformly uniqueness updated values variables variation various zero