...Intrinsic Concentration in Silicon, Solid-State Electronics 10, 1039-1051 (1967) . 12. Li, SS, and Thurber, WR , The Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in ff-Type Silicon, Solid-State Electronics, to be published (1977). 13. Conwell, E., and Weisskopf, VF,...

...systems I, 77-6745 Technical profile of seven data element dictionary/directory systems., 77m¿ 6745 The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon I, 77-7683 Electron ¿ micronualyals — Congresses. Use of Monte Carlo calculations in eectron probe...

...sub 1-х P sub x alloy systems I.AD-A025294] 02 o0264 N77-118*9 Semiconductor measurement technology: The dopant density and temperature dependence of electron mobility and resistivity in N-lype silicon [PB-264I21/51 15 p2059 N77-24976 LI, ST Electromagnetic system interaction algorithms...

...contact for additional information: RI Scace. 9. REFERENCES Li, SS, and Thurber, WR , The Dop- 12. ant Density and Temperature Dependence of Electron Mobility and Resistivity in n-Type Silicon, Solid-State Electronics 20, 609-616 (1977). Li, SS, Semiconductor Measurement 13. Technology: The Dopant Density...

...important contributions of autoionization to ionization and fragmentation at higher energies. 17147. Li, SS, Thurber, WR, The dopant density and temperature...electron mobility and resistivity in ntype silicon, Solid-Slate Electron. 20, 609-616 (1977). Key words: dopant density; electron-electron scattering;...

...Coefficient in One— sided Abrupt Junctions", Solid-State Electron., Vol.19, pp. 875-881, 1976. /92/ Li SS, Thurber WR , "The Dopant Density and Temperature...Dependence of Electron Mobility and Resistivity in n-Type /93/ Liu S., Hoefflinger B., Pederson DO, "Interactive Two— Dimensional Design of Barrier Controlled...

...Pattern NBS-4, WR Thurber and MG Buehler (April 1978). 400-33 Semiconductor Measurement Technology. The Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in N-Type Silicon, SS Li (March 1977). 400-34 Semiconductor Measurement Technology. Safe Operation of Capacitance Meters...

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...impurity scattering in semiconductors," Phys. Rev. 104, 1559-1567 (1956). 59. SS Li and WR Thurber, "The dopant density and temperature dependence of...silicon," SolidState Electron. 20, 609-616 (1977). 60. K. Yamaguchi, "A mobility model for carriers in the MOS inversion layer," IEEE Trans. Electron...