Advances in Silicon Carbide Processing and Applications

Stephen E. Saddow, Anant K. Agarwal
Artech House, 01.01.2004 - 212 Seiten
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices.

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Über den Autor (2004)

Stephen E. Saddow is an associate professor electrical engineering at the University of South Florida, Tampa, Florida.

Anant K. Agarwal is a Senior Scientist at Cree Inc., Durham, North Carolina, managing the development of SIC power devices.

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