Analysis and Simulation of Semiconductor DevicesSpringer Science & Business Media, 1984 - 293 Seiten The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices. |
Inhalt
Some Fundamental Properties | 8 |
Process Modeling | 46 |
The Physical Parameters | 80 |
Analytical Investigations About the Basic Semiconductor | 127 |
The Discretization of the Basic Semiconductor Equations | 149 |
The Solution of Systems of Nonlinear Algebraic Equations | 202 |
The Solution of Sparse Systems of Linear Equations | 214 |
A Glimpse on Results | 258 |
Author Index | 286 |
Andere Ausgaben - Alle anzeigen
Häufige Begriffe und Wortgruppen
1+exp 300 K temperature algorithm Analysis approximation assumed band gap basic semiconductor equations Boltzmann Boole Press boundary conditions calculated carrier concentrations carrier mobilities cm² coefficient conduction band continuity equations convergence current density current relations Cuthill-McKee denotes dependent variables derivatives Device Modeling differential equations diffusion dimensional discretization distribution function div grad doping concentration electric field Electron Devices electrons and holes electrostatic potential energy Fermi Fermi energy finite difference finite element method five-point example GaAs Gaussian generation/recombination gradient Heavily Doped IEEE IEEE Trans impact ionization implantation impurity scattering integral interface ionized impurity ionized impurity scattering iterative methods lattice linear systems mathematical mesh nodes Numerical obtain oxide p-n Junctions parameters Permuted matrix physical Poisson equation problem Proc recombination Section Selberherr Semiconductor Device Modeling Semiconductor Devices SIAM silicon Solid-State Electron solution thermal truncation error Two-Dimensional valence band values vector velocity ду дх