Analysis and Simulation of Semiconductor Devices
Springer Science & Business Media, 1984 - 293 Seiten
The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
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Some Fundamental Properties
The Physical Parameters
Analytical Investigations About the Basic Semiconductor
The Discretization of the Basic Semiconductor Equations
The Solution of Systems of Nonlinear Algebraic Equations
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Seite 121 - The Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in n-Type Silicon,